Institute of Physics, Chinese Academy of Sciences, original silicon-based zinc oxide single crystal material and optoelectronic device technology

After more than five years of continuous research, the Du Xiaolong Research Group of the Institute of Physics of the Chinese Academy of Sciences/Beijing National Laboratory for Condensed Matter Physics has developed a low-temperature interface engineering technology and further designed and constructed a novel n-ZnO with a sharp interface. The i-MgO/p-Si double heterojunction pin UV detector structure has successfully developed a Si-based ZnO visible blind ultraviolet detector principle device. Its original silicon-based zinc oxide single crystal material growth process and new device structure design and preparation technology have opened up a new way for China's independent innovation research in the field of optoelectronic technology.

The integration of short-wavelength photoelectrons and Si microelectronics has attracted much attention due to its significant application value. Among them, the research of silicon-based ZnO materials and optoelectronic devices is an important topic in the world. However, the preparation of Si-based high-quality ZnO single crystal materials, Problems such as the design of the device structure are very challenging. This is because the Si surface has a strong activity, and it is easy to form amorphous oxides and silicides, which hinder the epitaxial growth of ZnO. In addition, since the energy band structure of Si does not match ZnO, it is difficult to obtain desired optoelectronic device performance. Therefore, how to control the surface of Si substrate and ZnO/Si heterointerface and design a new device structure has become the core scientific issue of this research direction.

Since 2004, the group of research associates Mei Zengxia and Ph.D. students Wang Xina and Wang Yong have systematically studied the deposition process of thin metal Mg on Si(111)-7x7 clean surface and found that Si and Mg can be suppressed only at low temperature. The interface of the atoms is mutually diffused to form a Mg(0001) single crystal thin film. Further studies have found that the single crystal Mg film can be processed by active oxygen to form a MgO (111) ultrathin film of the rock salt phase, thereby providing a good template for the two-step epitaxial growth of ZnO. Through the optimization of a series of growth parameters, they finally used the MBE method to finally produce high-quality ZnO single crystal thin films on 2-inch Si chips, and their comprehensive indexes such as crystallinity and photoelectric performance were leading the world. The related papers were rated as the most advanced "EXC EL LENT" by the reviewers of Applied Physics Letters in the United States [APL, 90, 151912 (2007)]. The commentary pointed out that this is an outstanding research work. The paper demonstrates a mechanism and method for preparing a ZnO single crystal film on a Si substrate with solid evidence, and the interface technology for obtaining MgO by Mg oxidation can be applied. To the preparation of other silicon-based heterogeneous films. This original low-temperature interface engineering technology has applied for two international patents and domestic patents [one of which has been authorized (ZL200610064977.5)]. This work was done in cooperation with Academician Xue Qikun, Professor Jia Jinfeng of Tsinghua University, Academician Zhang Ze of Beijing University of Technology, and the researcher of the Landwei Researcher of the Shanghai Institute of Technology of the Chinese Academy of Sciences.

On the basis of breakthroughs in the preparation process of Si-based ZnO single crystal thin films, Du Xiaolong research group further developed the application research of Si-based ZnO optoelectronic devices. Recently, Associate Professor Guo Yang and Dr. Zhang Tianchong from the group collaborated with the research team of the Micro-Processing Laboratory, Gu Changzhi, to design and prepare a novel n-ZnO/i-MgO/p-Si double heterojunction. UV detector principle device. The device has good pn junction rectification characteristics, and the rectification ratio is above 104 at ±2V. It is found that the MgO barrier layer interposed between ZnO/Si effectively suppresses the response of silicon to visible light. The device responds only to ultraviolet light above the ZnO bandgap (380 nm), thus having visible blind ultraviolet light detection. Compared with the commercially available silicon UV photodetectors, the device makes full use of the wide-bandgap ZnO excellent photoelectric performance, strong UV response, and can work directly in the visible light background, without the need for a filter system to shield the visible light response. Therefore, it has the advantages of simple structure and superior performance. The preparation technology of related devices has been applied for national invention patent (application number.9), and related research work has recently been published in the Applied Physics Letter [APL, 94, 113508 (2009)]. Since the growth temperature of ZnO is low and compatible with the mature Si planar process, the Si-based ZnO system provides a way to monolithically integrate electrical, optical, and acoustic devices, and has potential applications.

The research was funded by the Chinese Academy of Sciences' Knowledge Innovation Project, the National Natural Science Foundation Project, and the Ministry of Science and Technology.


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